High Mobility and Quantum Well Transistors : Design and TCAD Simulation /

High Mobility and Quantum Well Transistors : Design and TCAD Simulation /

Detalles Bibliográficos
Autores principales: Hellings, Geert. (Autor), De Meyer, Kristin. (Autor)
Autor Corporativo: SpringerLink (Online service)
Formato: eBook
Lenguaje:English
Publicado: Dordrecht : Springer Netherlands : Imprint: Springer, 2013.
Edición:1st ed. 2013.
Colección:Springer Series in Advanced Microelectronics, 42
Materias:
Electronic circuits.
Optical materials.
Electronic materials.
Semiconductors.
Nanotechnology.
Electronic Circuits and Devices.
Circuits and Systems.
Optical and Electronic Materials.
Nanotechnology and Microengineering.
Tabla de Contenidos:
  • List of Abbreviations and Symbols
  • 1 Introduction
  • 2 S/D Junctions in Ge: experimental
  • 3 TCAD Simulation and Modeling of Ion Implants in Germanium
  • 4 Electrical TCAD Simulations and Modeling in Germanium
  • 5 Investigation of Quantum Well Transistors for Scaled Technologies
  • 6 Implant-Free Quantum Well FETs: Experimental investigation
  • 7 Conclusions Future Work and Outlook
  • Bibliography
  • List of Publications.

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