Silicon Devices and Process Integration : Deep Submicron and Nano-Scale Technologies - El-Kareh, Badih; SpringerLink (Online service) (New York, NY : Springer US : Imprint: Springer, 2009)
Properties of the Silicon Crystal. Valence-bond and energy-band models. Thermal equilibrium statistics. Carrier transport mechanisms. Non-equilibrium conditions and carrier lifetime -- Junctions and Contacts. Ohmic, non-ohmic, and rectifying contacts. PN junctions, homo- and hetero-junctions. Contact und junction characterization, parameter extraction. Varactors -- Junction Field-Effect Transistor, JFET. Structure and mode of operation. Physics of JFET. JFET characterization and parameter extraction. High-voltage applications. Parasitic effects -- Bipolar Junction Transistor, BJT. Structure and mode of operation. Physics of BJT. Heterojunction Bipolar Transistor, HBT. Transistor characterization and parameter extraction. High-voltage applications -- Parasitic effects.
Keywords: Electronic circuits; Electronics; Microelectronics; Electrical engineering; Materials science; Circuits and Systems; Electronics and Microelectronics, Instrumentation; Electrical Engineering; Materials Science, general