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01120nam a2200301 a 4500 |
| 008 |
050201s1967||||xxua |||||||||||||eng|| |
| 942 |
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|c BK
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| 041 |
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|a eng
|
| 082 |
|
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|a 547.23
|b B874f
|
| 100 |
|
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|a Burger, R. M.
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| 700 |
|
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|a Donovan, R. P.
|e coautor
|
| 245 |
0 |
0 |
|a Fundamentals of silicon integrated device technology:
|b vol. I : oxidation, diffusion and epitaxy /
|c Edited by : R. M. Burger / R. P. Donovan.
|
| 260 |
|
|
|a New Jersey :
|b Prentice-Hall,
|c 1967
|
| 300 |
|
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|a 495 p. ;
|b iL.
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| 440 |
|
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|a Prentice-Hall electrical engineering series
|
| 650 |
|
|
|a Oxidación
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| 650 |
|
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|a Difusión
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| 650 |
|
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|a Epitaxy
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| 592 |
|
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|a Properties of silica glass
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| 592 |
|
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|a Methods of oxide formation
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| 592 |
|
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|a Oxide properties
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| 592 |
|
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|a Application of oxides in silicon integrated devices
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| 592 |
|
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|a Diffusion theory
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| 592 |
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|a Theory of epitaxy
|
| 592 |
|
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|a Growth techniques
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| 592 |
|
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|a Evaluation techniques and results
|
| 999 |
|
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|c 107326
|d 107326
|
| 952 |
|
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|0 0
|1 0
|4 0
|6 547_230000000000000_B874F
|7 0
|8 CG
|9 189678
|a 19
|b 19
|c CG
|d 2012-08-15
|i 19102142
|o 547.23 B874f
|p 19102142
|r 2012-08-15
|t 1
|w 2012-08-15
|y BK
|