Polarization Effects in Semiconductors From Ab Initio Theory to Device Applications /

Detalles Bibliográficos
Autor Corporativo:	SpringerLink (Online service)
Otros Autores:	Wood, Colin. (Editor ), Jena, Debdeep. (Editor )
Formato:	eBook
Lenguaje:	English
Publicado:	New York, NY : Springer US : Imprint: Springer, 2008.
Edición:	1st ed. 2008.
Materias:	Electronics. Microelectronics. Solid state physics. Spectroscopy. Microscopy. Electronic circuits. Optical materials. Electronic materials. Engineering. Electronics and Microelectronics, Instrumentation. Solid State Physics. Spectroscopy and Microscopy. Circuits and Systems. Optical and Electronic Materials. Engineering, general.
Acceso en línea:	https://doi.org/10.1007/978-0-387-68319-5

Tabla de Contenidos:

Theoretical Approach to Polarization Effects in Semiconductors
Polarization Induced Effects in GaN-based Heterostructures and Novel Sensors
Lateral and Vertical Charge Transport in Polar Nitride Heterostructures
Polarization Effects on Low-Field Transport & Mobility in III-V Nitride HEMTs
Local Polarization Effects in Nitride Heterostructures and Devices
Polarization in Wide Bandgap Semiconductors and their Characterization by Scanning Probe Microscopy
Functionally Graded Polar Heterostuctures: New Materials for Multifunctional Devices
Polarization in GaN Based Heterostructures and Heterojunction Field Effect Transistors (HFETs)
Effects of Polarization in Optoelectronic Quantum Structures.

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