Polarization Effects in Semiconductors From Ab Initio Theory to Device Applications /

Bibliographic Details
Corporate Author:	SpringerLink (Online service)
Other Authors:	Wood, Colin. (Editor), Jena, Debdeep. (Editor)
Format:	eBook
Language:	English
Published:	New York, NY : Springer US : Imprint: Springer, 2008.
Edition:	1st ed. 2008.
Subjects:	Electronics. Microelectronics. Solid state physics. Spectroscopy. Microscopy. Electronic circuits. Optical materials. Electronic materials. Engineering. Electronics and Microelectronics, Instrumentation. Solid State Physics. Spectroscopy and Microscopy. Circuits and Systems. Optical and Electronic Materials. Engineering, general.
Online Access:	https://doi.org/10.1007/978-0-387-68319-5

Table of Contents:

Theoretical Approach to Polarization Effects in Semiconductors
Polarization Induced Effects in GaN-based Heterostructures and Novel Sensors
Lateral and Vertical Charge Transport in Polar Nitride Heterostructures
Polarization Effects on Low-Field Transport & Mobility in III-V Nitride HEMTs
Local Polarization Effects in Nitride Heterostructures and Devices
Polarization in Wide Bandgap Semiconductors and their Characterization by Scanning Probe Microscopy
Functionally Graded Polar Heterostuctures: New Materials for Multifunctional Devices
Polarization in GaN Based Heterostructures and Heterojunction Field Effect Transistors (HFETs)
Effects of Polarization in Optoelectronic Quantum Structures.

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