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05535nam a22003975i 4500 |
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978-1-4020-8425-6 |
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20191021212727.0 |
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cr nn 008mamaa |
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100301s2008 ne | s |||| 0|eng d |
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|a 9781402084256
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|a 10.1007/978-1-4020-8425-6
|2 doi
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| 040 |
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|a Sistema de Bibliotecas del Tecnológico de Costa Rica
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| 245 |
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|a Narrow Gap Semiconductors 2007
|b Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK /
|c edited by Ben Murdin, S.K. Clowes.
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| 250 |
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|a 1st ed. 2008.
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| 260 |
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|a Dordrecht :
|b Springer Netherlands :
|b Imprint: Springer,
|c 2008.
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| 300 |
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|a XVI, 216 p.
|b online resource.
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| 336 |
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|a text
|b txt
|2 rdacontent
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| 337 |
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|a computer
|b c
|2 rdamedia
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| 338 |
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|a online resource
|b cr
|2 rdacarrier
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| 490 |
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|a Springer Proceedings in Physics,
|v 119
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| 505 |
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|a Spin-Related Phenomena -- Gate Dependence of Spin-Splitting in an InSb/InAlSb Quantum Well -- Photogalvanic Effects in HgTe Quantum Wells -- Magnetic and Structural Properties of Ferromagnetic GeMnTe Layers -- Control and Probe of Carrier and Spin Relaxations in InSb Based Structures -- Density and Well-Width Dependence of the Spin Relaxation in n-InSb/AlInSb Quantum Wells -- Dependence of Layer Thickness on Magnetism and Electrical Conduction in Ferromagnetic (In,Mn)As/GaSb Heterostructures -- Temperature Dependence of the Electron Lande g-Factor in InSb -- Anomalous Spin Splitting of Electrons in InSb Type-II Quantum Dots in an InAs Matrix -- Measurement of the Dresselhaus and Rashba Spin-Orbit Coupling Via Weak Anti-Localization in InSb Quantum Wells -- Growth, Fabrication, Characterisation and Theory -- Picosecond Carrier Dynamics in Narrow-Gap Semiconductors studied by Terahertz Radiation Pulses -- Band Structure of InSbN and GaSbN -- Growth and Characterisation of Dilute Antimonide Nitride Materials for Long Wavelength Applications -- Electron Interband Breakdown in a Kane Semiconductor with a Degenerate Hole Distribution -- InMnAs Quantum Dots: A Raman Spectroscopy Analysis -- Conduction Band States in AlP/GaP Quantum Wells -- Growth of InAsSb Quantum Wells by Liquid Phase Epitaxy -- Diode Lasers for Free Space Optical Communications Based on InAsSb/InAsSbP Grown by LPE -- Epitaxial Growth and Characterization of PbGeEuTe Layers -- Monte Carlo Simulation of Electron Transport in PbTe -- L-Band-Related Interband Transition in InSb/GaSb Self-Assembled Quantum Dots -- Antimony Distribution in the InSb/InAs QD Heterostructures -- Transport Properties of InAs0.1Sb0.9 Thin Films Sandwiched by Al0.1In0.9Sb Layers Grown on GaAs(100) Substrates by Molecular Beam Epitaxy -- Modelling of Photon Absorption and Carrier Dynamics in HgCdTe under mid-IR Laser Irradiation -- Monte Carlo Study of Transport Properties of InN -- New Type of Combined Resonance in p-PbTe -- Carbon Nanotubes and Graphene -- Theory of Third-Order Optical Susceptibility of Single-Wall Carbon Nanotubes With Account of Coulomb Interaction -- Unveiling the Magnetically Induced Field-Effect in Carbon Nanotubes Devices -- Transient Zitterbewegung of Electrons in Graphene and Carbon Nanotubes -- Cross-Polarized Exciton Absorption in Semiconducting Carbon Nanotubes -- Nanocrystals and Nanowires -- Self-Assembled InSb/InAs Quantum Dots for the Mid-Infrared Spectral Range 3-4 ?m -- InSb/InAs Nanostructures Grown by Molecular Beam Epitaxy Using Sb2 and As2 Fluxes -- Electronic Devices -- Performance Evaluation of Conventional Sb-based Multiquantum Well Lasers operating above 3?m at Room Temperature -- Electroluminescence From Electrically Pumped GaSb-Based VCSELs -- Wavelength Tunable Resonant Cavity Enhanced Photodetectors Based on Lead-Salts Grown by MBE -- Farfield Measurements of Y-Coupled Quantum Cascade Lasers -- Impact of Doping Density in Short-Wavelength InP-Based Strain-Compensated Quantum-Cascade Lasers -- Magnetic Field Effects in InSb/AlxIn1?xSb Quantum-Well Light-Emitting Diodes -- Electroluminescence From InSb-Based Mid-Infrared Quantum Well Lasers -- InAs Quantum Hot Electron Transistor -- Easy-to-Use Scalable Antennas for Coherent Detection of THz Radiation -- Single Photon Detection in the Long Wave Infrared -- High-Performance Fabry-Perot and Distributed-Feedback Interband Cascade Lasers -- Mid-Infrared Lead-Salt VECSEL (Vertical External Cavity Surface Emitting Laser) for Spectroscopy -- Optically Pumped GaSb-Based VECSELs -- Magneto-Transport and Magneto-Optics -- Cyclotron Resonance Photoconductivity of a Two-Dimensional Electron Gas in HgTe Quantum Wells -- Extrinsic Electrons and Carrier Accumulation in AlxIn1?xSb/InSb Quantum Wells: Well-Width Dependence -- Negative and Positive Magnetoresistance in Variable-Range Hopping Regime of Undoped AlxIn1?xSb/InSb Quantum Wells -- Semimetal-Insulator Transition in Two-Dimensional System at the Type II Broken-Gap InAs/GalnAsSb Single Heterointerface -- Magnetoexcitons in Strained InSb Quantum Wells.
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| 650 |
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0 |
|a Optical materials.
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| 650 |
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|a Electronic materials.
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| 650 |
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|a Materials science.
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| 650 |
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|a Lasers.
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| 650 |
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0 |
|a Photonics.
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| 650 |
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|a Engineering.
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| 650 |
1 |
4 |
|a Optical and Electronic Materials.
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| 650 |
2 |
4 |
|a Characterization and Evaluation of Materials.
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| 650 |
2 |
4 |
|a Optics, Lasers, Photonics, Optical Devices.
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| 650 |
2 |
4 |
|a Engineering, general.
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| 700 |
1 |
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|a Murdin, Ben.
|e editor.
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| 700 |
1 |
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|a Clowes, S.K.
|e editor.
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| 710 |
2 |
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|a SpringerLink (Online service)
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| 773 |
0 |
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|t Springer eBooks
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| 856 |
4 |
0 |
|u https://doi.org/10.1007/978-1-4020-8425-6
|