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100301s2008 gw | s |||| 0|eng d |
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|a 9783540745297
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| 024 |
7 |
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|a 10.1007/978-3-540-74529-7
|2 doi
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| 040 |
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|a Sistema de Bibliotecas del Tecnológico de Costa Rica
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| 245 |
1 |
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|a Dilute III-V Nitride Semiconductors and Material Systems :
|b Physics and Technology /
|c edited by Ayse Erol.
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| 250 |
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|a 1st ed. 2008.
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| 260 |
# |
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|a Berlin, Heidelberg :
|b Springer Berlin Heidelberg :
|b Imprint: Springer,
|c 2008.
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| 300 |
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|a XXXII, 592 p. :
|b online resource.
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| 336 |
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|a text
|b txt
|2 rdacontent
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| 337 |
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|a computer
|b c
|2 rdamedia
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| 338 |
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|a online resource
|b cr
|2 rdacarrier
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| 490 |
1 |
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|a Springer Series in Materials Science,
|v 105
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| 505 |
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|a Energetic Beam Synthesis of Dilute Nitrides and Related Alloys -- Impact of Nitrogen Ion Density on the Optical and Structural Properties of MBE Grown GaInNAs/GaAs (100) and (111)B Quantum Wells -- Electronic Band Structure of Highly Mismatched Semiconductor Alloys -- Electronic Structure of GaNxAs1?x Under Pressure -- Experimental Studies of GaInNAs Conduction Band Structure -- Electromodulation Spectroscopy of GaInNAsSb/GaAs Quantum Wells: The Conduction Band Offset and the Electron Effective Mass Issues -- The Effects of Nitrogen Incorporation on Photogenerated Carrier Dynamics in Dilute Nitrides -- Influence of the Growth Temperature on the Composition Fluctuations of GaInNAs/GaAs Quantum Wells -- Assessing the Preferential Chemical Bonding of Nitrogen in Novel Dilute III–As–N Alloys -- The Hall Mobility in Dilute Nitrides -- Spin Dynamics in Dilute Nitride -- Optical and Electronic Properties of GaInNP Alloys: A New Material for Lattice Matching to GaAs -- Properties and Laser Applications of the GaP-Based (GaNAsP)-Material System for Integration to Si Substrates -- Comparison of the Electronic Band Formation and Band Structure of GaNAs and GaNP -- Doping, Electrical Properties and Solar Cell Application of GaInNAs -- Elemental Devices and Circuits for Monolithic Optoelectronic-Integrated Circuit Fabricated in Dislocation-Free Si/III–V-N Alloy Layers Grown on Si Substrate -- Analysis of GaInNAs-Based Devices: Lasers and Semiconductor Optical Amplifiers -- Dilute Nitride Quantum Well Lasers by Metalorganic Chemical Vapor Deposition -- Interdiffused GaInNAsSb Quantum Well on GaAs for 1,300–1,550 nm Diode Lasers -- Vertical Cavity Semiconductor Optical Amplifiers Based on Dilute Nitrides -- Dilute Nitride Photodetector and Modulator Devices.
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| 650 |
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|a Optical materials.
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| 650 |
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|a Electronic materials.
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| 650 |
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|a Solid state physics.
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| 650 |
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|a Spectroscopy.
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| 650 |
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|a Microscopy.
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| 650 |
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|a Engineering.
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| 650 |
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|a Lasers.
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| 650 |
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|a Photonics.
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| 650 |
1 |
4 |
|a Optical and Electronic Materials.
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| 650 |
2 |
4 |
|a Solid State Physics.
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| 650 |
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4 |
|a Spectroscopy and Microscopy.
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| 650 |
2 |
4 |
|a Engineering, general.
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| 650 |
2 |
4 |
|a Optics, Lasers, Photonics, Optical Devices.
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| 700 |
1 |
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|a Erol, Ayse.
|e editor.
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| 710 |
2 |
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|a SpringerLink (Online service)
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| 773 |
0 |
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|t Springer eBooks
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