Dilute III-V Nitride Semiconductors and Material Systems : Physics and Technology /
Autor Corporativo: | |
---|---|
Otros Autores: | |
Formato: | eBook |
Lenguaje: | English |
Publicado: |
Berlin, Heidelberg :
Springer Berlin Heidelberg : Imprint: Springer,
2008.
|
Edición: | 1st ed. 2008. |
Colección: | Springer Series in Materials Science,
105 |
Materias: |
Tabla de Contenidos:
- Energetic Beam Synthesis of Dilute Nitrides and Related Alloys
- Impact of Nitrogen Ion Density on the Optical and Structural Properties of MBE Grown GaInNAs/GaAs (100) and (111)B Quantum Wells
- Electronic Band Structure of Highly Mismatched Semiconductor Alloys
- Electronic Structure of GaNxAs1?x Under Pressure
- Experimental Studies of GaInNAs Conduction Band Structure
- Electromodulation Spectroscopy of GaInNAsSb/GaAs Quantum Wells: The Conduction Band Offset and the Electron Effective Mass Issues
- The Effects of Nitrogen Incorporation on Photogenerated Carrier Dynamics in Dilute Nitrides
- Influence of the Growth Temperature on the Composition Fluctuations of GaInNAs/GaAs Quantum Wells
- Assessing the Preferential Chemical Bonding of Nitrogen in Novel Dilute III–As–N Alloys
- The Hall Mobility in Dilute Nitrides
- Spin Dynamics in Dilute Nitride
- Optical and Electronic Properties of GaInNP Alloys: A New Material for Lattice Matching to GaAs
- Properties and Laser Applications of the GaP-Based (GaNAsP)-Material System for Integration to Si Substrates
- Comparison of the Electronic Band Formation and Band Structure of GaNAs and GaNP
- Doping, Electrical Properties and Solar Cell Application of GaInNAs
- Elemental Devices and Circuits for Monolithic Optoelectronic-Integrated Circuit Fabricated in Dislocation-Free Si/III–V-N Alloy Layers Grown on Si Substrate
- Analysis of GaInNAs-Based Devices: Lasers and Semiconductor Optical Amplifiers
- Dilute Nitride Quantum Well Lasers by Metalorganic Chemical Vapor Deposition
- Interdiffused GaInNAsSb Quantum Well on GaAs for 1,300–1,550 nm Diode Lasers
- Vertical Cavity Semiconductor Optical Amplifiers Based on Dilute Nitrides
- Dilute Nitride Photodetector and Modulator Devices.