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130423s2013 xxu| s |||| 0|eng d |
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|a 9781461468226
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|a 10.1007/978-1-4614-6822-6
|2 doi
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|a Sistema de Bibliotecas del Tecnológico de Costa Rica
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|a Chaudhry, Amit.
|e author.
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|a Fundamentals of Nanoscaled Field Effect Transistors /
|c by Amit Chaudhry.
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|a 1st ed. 2013.
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|a New York, NY :
|b Springer New York :
|b Imprint: Springer,
|c 2013.
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|a XIV, 201 p. 121 illus., 102 illus. in color. :
|b online resource.
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|a text
|b txt
|2 rdacontent
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|a computer
|b c
|2 rdamedia
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|a online resource
|b cr
|2 rdacarrier
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|a Scaling of a MOS Transistor -- Nanoscale Effects- Gate Oxide Leakage Currents -- Nanoscale Effects- Inversion Layer Quantization -- Dielectrics for Nanoelectronics -- Germanium Technology -- Biaxial s-Si Technology -- Uniaxial s-Si Technology -- Alternate MOS Structures -- Graphene Technology.
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|a Electronics.
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|a Microelectronics.
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|a Electronic circuits.
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|a Nanoscale science.
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|a Nanoscience.
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|a Nanostructures.
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|a Optical materials.
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|a Electronic materials.
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|a Electronics and Microelectronics, Instrumentation.
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|a Electronic Circuits and Devices.
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|a Circuits and Systems.
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|a Nanoscale Science and Technology.
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|a Optical and Electronic Materials.
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|a SpringerLink (Online service)
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|t Springer eBooks
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