Fundamentals of Nanoscaled Field Effect Transistors /

Fundamentals of Nanoscaled Field Effect Transistors /

Detalles Bibliográficos
Autor principal: Chaudhry, Amit. (Autor)
Autor Corporativo: SpringerLink (Online service)
Formato: eBook
Lenguaje:English
Publicado: New York, NY : Springer New York : Imprint: Springer, 2013.
Edición:1st ed. 2013.
Materias:
Electronics.
Microelectronics.
Electronic circuits.
Nanoscale science.
Nanoscience.
Nanostructures.
Optical materials.
Electronic materials.
Electronics and Microelectronics, Instrumentation.
Electronic Circuits and Devices.
Circuits and Systems.
Nanoscale Science and Technology.
Optical and Electronic Materials.
Tabla de Contenidos:
  • Scaling of a MOS Transistor
  • Nanoscale Effects- Gate Oxide Leakage Currents
  • Nanoscale Effects- Inversion Layer Quantization
  • Dielectrics for Nanoelectronics
  • Germanium Technology
  • Biaxial s-Si Technology
  • Uniaxial s-Si Technology
  • Alternate MOS Structures
  • Graphene Technology.

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