Fundamentals of Nanoscaled Field Effect Transistors /

Bibliographic Details
Main Author: Chaudhry, Amit. (Author)
Corporate Author: SpringerLink (Online service)
Format: eBook
Language:English
Published: New York, NY : Springer New York : Imprint: Springer, 2013.
Edition:1st ed. 2013.
Subjects:
Table of Contents:
  • Scaling of a MOS Transistor
  • Nanoscale Effects- Gate Oxide Leakage Currents
  • Nanoscale Effects- Inversion Layer Quantization
  • Dielectrics for Nanoelectronics
  • Germanium Technology
  • Biaxial s-Si Technology
  • Uniaxial s-Si Technology
  • Alternate MOS Structures
  • Graphene Technology.