Fundamentals of Nanoscaled Field Effect Transistors /
Main Author: | |
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Corporate Author: | |
Format: | eBook |
Language: | English |
Published: |
New York, NY :
Springer New York : Imprint: Springer,
2013.
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Edition: | 1st ed. 2013. |
Subjects: |
Table of Contents:
- Scaling of a MOS Transistor
- Nanoscale Effects- Gate Oxide Leakage Currents
- Nanoscale Effects- Inversion Layer Quantization
- Dielectrics for Nanoelectronics
- Germanium Technology
- Biaxial s-Si Technology
- Uniaxial s-Si Technology
- Alternate MOS Structures
- Graphene Technology.