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100301s2009 xxu| s |||| 0|eng d |
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|a 9780387690100
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|a 10.1007/978-0-387-69010-0
|2 doi
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|a Sistema de Bibliotecas del Tecnológico de Costa Rica
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|a El-Kareh, Badih.
|e author.
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|a Silicon Devices and Process Integration :
|b Deep Submicron and Nano-Scale Technologies /
|c by Badih El-Kareh.
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|a 1st ed. 2009.
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|a New York, NY :
|b Springer US :
|b Imprint: Springer,
|c 2009.
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|a XXVI, 598 p. :
|b online resource.
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|a text
|b txt
|2 rdacontent
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|a computer
|b c
|2 rdamedia
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|a online resource
|b cr
|2 rdacarrier
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|a Properties of the Silicon Crystal. Valence-bond and energy-band models. Thermal equilibrium statistics. Carrier transport mechanisms. Non-equilibrium conditions and carrier lifetime -- Junctions and Contacts. Ohmic, non-ohmic, and rectifying contacts. PN junctions, homo- and hetero-junctions. Contact und junction characterization, parameter extraction. Varactors -- Junction Field-Effect Transistor, JFET. Structure and mode of operation. Physics of JFET. JFET characterization and parameter extraction. High-voltage applications. Parasitic effects -- Bipolar Junction Transistor, BJT. Structure and mode of operation. Physics of BJT. Heterojunction Bipolar Transistor, HBT. Transistor characterization and parameter extraction. High-voltage applications -- Parasitic effects.
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|a Electronic circuits.
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|a Electronics.
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|a Microelectronics.
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|a Electrical engineering.
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|a Materials science.
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|a Circuits and Systems.
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|a Electronics and Microelectronics, Instrumentation.
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|a Electrical Engineering.
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|a Materials Science, general.
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|a SpringerLink (Online service)
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|t Springer eBooks
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