Silicon Devices and Process Integration : Deep Submicron and Nano-Scale Technologies /

Detalles Bibliográficos
Autor principal: El-Kareh, Badih. (Autor)
Autor Corporativo: SpringerLink (Online service)
Formato: eBook
Lenguaje:English
Publicado: New York, NY : Springer US : Imprint: Springer, 2009.
Edición:1st ed. 2009.
Materias:
Tabla de Contenidos:
  • Properties of the Silicon Crystal. Valence-bond and energy-band models. Thermal equilibrium statistics. Carrier transport mechanisms. Non-equilibrium conditions and carrier lifetime
  • Junctions and Contacts. Ohmic, non-ohmic, and rectifying contacts. PN junctions, homo- and hetero-junctions. Contact und junction characterization, parameter extraction. Varactors
  • Junction Field-Effect Transistor, JFET. Structure and mode of operation. Physics of JFET. JFET characterization and parameter extraction. High-voltage applications. Parasitic effects
  • Bipolar Junction Transistor, BJT. Structure and mode of operation. Physics of BJT. Heterojunction Bipolar Transistor, HBT. Transistor characterization and parameter extraction. High-voltage applications
  • Parasitic effects.