Silicon Devices and Process Integration : Deep Submicron and Nano-Scale Technologies /
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Autor Corporativo: | |
Formato: | eBook |
Lenguaje: | English |
Publicado: |
New York, NY :
Springer US : Imprint: Springer,
2009.
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Edición: | 1st ed. 2009. |
Materias: |
Tabla de Contenidos:
- Properties of the Silicon Crystal. Valence-bond and energy-band models. Thermal equilibrium statistics. Carrier transport mechanisms. Non-equilibrium conditions and carrier lifetime
- Junctions and Contacts. Ohmic, non-ohmic, and rectifying contacts. PN junctions, homo- and hetero-junctions. Contact und junction characterization, parameter extraction. Varactors
- Junction Field-Effect Transistor, JFET. Structure and mode of operation. Physics of JFET. JFET characterization and parameter extraction. High-voltage applications. Parasitic effects
- Bipolar Junction Transistor, BJT. Structure and mode of operation. Physics of BJT. Heterojunction Bipolar Transistor, HBT. Transistor characterization and parameter extraction. High-voltage applications
- Parasitic effects.