Extreme Statistics in Nanoscale Memory Design /

Detalles Bibliográficos
Autor Corporativo: SpringerLink (Online service)
Otros Autores: Singhee, Amith. (Editor ), Rutenbar, Rob A. (Editor )
Formato: eBook
Lenguaje:English
Publicado: New York, NY : Springer US : Imprint: Springer, 2010.
Edición:1st ed. 2010.
Colección:Integrated Circuits and Systems,
Materias:
Tabla de Contenidos:
  • Extreme Statistics in Memories
  • Statistical Nano CMOS Variability and Its Impact on SRAM
  • Importance Sampling-Based Estimation: Applications to Memory Design
  • Direct SRAM Operation Margin Computation with Random Skews of Device Characteristics
  • Yield Estimation by Computing Probabilistic Hypervolumes
  • Most Probable Point-Based Methods
  • Extreme Value Theory: Application to Memory Statistics.