Nanometer Variation-Tolerant SRAM : Circuits and Statistical Design for Yield /

Detalles Bibliográficos
Autores principales: Abu Rahma, Mohamed. (Autor), Anis, Mohab. (Autor)
Autor Corporativo: SpringerLink (Online service)
Formato: eBook
Lenguaje:English
Publicado: New York, NY : Springer New York : Imprint: Springer, 2013.
Edición:1st ed. 2013.
Materias:
Tabla de Contenidos:
  • Introduction
  • Variability in Nanometer Technologies and Impact on SRAM
  • Variarion-Tolerant SRAM Write and Read Assist Techniques
  • Reducing SRAM Power using Fine-Grained Wordline Pulse Width Control
  • A Methodology for Statistical Estimation of Read Access Yield in SRAMs
  • Characterization of SRAM Sense Amplifier Input Offset for Yield Prediction.